Investigations of single-crystal CdTe on Si to enable future PV devices - Final Technical Report (FTR)

Summary

This project by Uriel Solar Inc., supported by the U.S. Department of Energy, aimed to de-risk and develop high-efficiency single-crystal Cadmium Telluride (CdTe) solar cells on inexpensive silicon substrates, addressing the current limitations of low open-circuit voltage (Voc) and the need for halide treatments in existing CdTe technologies. The approach involved using high deposition rate close-space sublimation and molecular beam epitaxy to grow single-crystal CdTe layers on silicon, exploring both in-situ and post-deposition doping methods. The project successfully achieved its doping milestones, demonstrating high carrier concentrations and doping efficiency, but fell short of consistently reaching the target Voc of 0.9V for the final devices, despite one device achieving 0.883V and promising short-circuit current density without halide treatment.

Key Facts

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